- AutorIn
- Thomas Waechtler
- Bernd Gruska
- Sven Zimmermann
- Stefan E. Schulz
- Thomas Gessner
- Titel
- Optical Properties of Sputtered Tantalum Nitride Films Determined by Spectroscopic Ellipsometry
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:swb:ch1-200600325
- Quellenangabe
- Oral contributed presentation; 4th Workshop Ellipsometry, 20-22 February 2006, Berlin, Germany
- Abstract (EN)
- Tantalum and tantalum nitride thin films are routinely applied as diffusion barriers in state-of-the-art metallization systems of microelectronic devices. In this work, such films were prepared by reactive magnetron sputtering on silicon and oxidized silicon substrates and studied by spectroscopic ellipsometry in the spectral range from 190 nm to 2.55 μm. The complex refractive index for thick films (75 to 380 nm) was modeled using a Lorentz-Drude approach. These models were applied to film stacks of 20 nm TaN / 20 nm Ta on unoxidized and thermally oxidized Si. With free oscillator parameters, accurate values of the film thicknesses were obtained according to cross-sectional scanning electron microscope (SEM) measurements. At the same time, a strong variation of the optical properties with film thickness and substrate was observed.
- Andere Ausgabe
- URL
Link: http://www.ake.bam.de/workshop-ellipsometry-2006/ - Freie Schlagwörter
- Tantalnitrid
- Klassifikation (DDC)
- 620
- Normschlagwörter (GND)
- Diffusionsbarriere
- Dünne Schicht
- Ellipsometrie
- Magnetronsputtern
- Metallisieren
- Mikroelektronik
- Optische Eigenschaft
- Tantal
- Publizierende Institution
- Technische Universität Chemnitz, Chemnitz
- URN Qucosa
- urn:nbn:de:swb:ch1-200600325
- Veröffentlichungsdatum Qucosa
- 16.03.2006
- Dokumenttyp
- Vorlesung/Vortrag
- Sprache des Dokumentes
- Englisch