In the last decades the rapid development in the area of electronic devices was defined by the continuing development in silicon wafer based semiconductor technology. High costs of the vacuum based processes used to fabricate electronic devices on silicon wafers alternative process techniques are for great interest for developing cost effective circuits. A promising alternative are printable semiconductors, which can be produced in a cost effective role to role process. The forming of silicon thin films by the excimer laser annealing of dispersion processed silicon nanoparticles on non silicon substrates is one of the promising candidates for such a process. The process combines the advantages of classical silicon technology with a cost effective printable process. In order to determine a suitable substrate a COMSOL Multiphyiscs simulation is used. As a first step the temperature profile was described in COMSOL Multiphysics using the heat diffusion equation. For this purpose system specific material parameters are determined such as the silicon nanoparticle melting point at 1683 K, the surface reflectivity at 248 nm of 20% and the nanoparticle thermal conductivity between 0.3 and 1.2 W/m∙K. To validate the model, the excimer laser process was first simulated on a silicon substrate. The comparison to experimental data obtained by Raman spectroscopy, Scanning electron microscopy (SEM) and electrochemical capacitance-voltage measurements (ECV). The experimental data are in good agreement with the theoretical findings and supports the validity of the model. In the following the model was extended to describe the laser process on a silicon nitride covered class substrate which is commonly used during laser annealing of silicon thin films. The simulations on these substrates were experimentally validated. During the evaluation experiments it became clear that In contrast to their film forming properties on oxide free silicon substrates, the nanoparticle thin film tends to dewet and form a porous µ-structure on the silicon nitrite covered glass. The size and the distribution of the µ-structure in dependence of the laser energy density were quantified using a SEM study in conjunction with the image processing software ImageJ. To get a deeper understanding of the film forming process, a COMSOL Multiphysics ® fluid dynamics model, which solves the Navier Stokes equation for incompressible Newtonian fluids, was developed. To account for the porous nanoparticle thin film structure in the simulation, an effective medium approach is used by applying a conservative level set one phase method to the mesh. This effort allows predicting the Silicon melt film formation ranging from a porous Silicon µ-structure to a compact 100% density Silicon thin film in dependence of the substrate / thin film interaction as well as the laser energy used for the nanoparticle processing. The simulation shows the possibility of forming a closed and 100% dense layer by laser annealing of a porous silicon nanoparticle thin film. Thereto the non equilibrium contact angle needs to be reduced to 55° and simultaneously the silicon nanoparticle layers porosity needs to be reduced to 40% or lower. Following this process technologies and methods to reduce the non equilibrium contact angle and the nanoparticle layer porosity are discussed. This shows that the forming of silicon thin films by the excimer laser annealing of dispersion processed silicon nanoparticles on non silicon substrates is a promising candidate for printable electronics.