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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-520801
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.52080
Zusammenfassung
Strong gate control of proximity-induced spin-orbit coupling was recently predicted in bilayer graphene/transition metal dichalcogenide (BLG/TMDC) heterostructures, as charge carriers can easily be shifted between the two graphene layers, and only one of them is in close contact to the TMDC. The presence of spin-orbit coupling can be probed by weak antilocalization (WAL) in low-field ...