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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-391731
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.39173
Zusammenfassung
We report on Hall field-induced resistance oscillations (HIROs) in a 60-nm-wide GaAs/AlGaAs quantum well with an in situ grown back gate, which allows tuning the carrier density n. At low n, when all electrons are confined to the lowest subband (SB1), the HIRO frequency, proportional to the product of the cyclotron diameter and the Hall field, scales with n(-1/2) as expected. Remarkably, the ...
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