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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-188461
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.18846
Zusammenfassung
The conductivity of doped Ge below the metal-insulator transition is measured at temperatures between 4 K and 40 mK and in magnetic fields up to 7 Tesla. In zero field the resistivity exponent diverges asT –1/2. In weak fields the magnetoresistance increases asB 2 and becomes exponentially large in strong fields and at low temperatures. The results can be described quantitatively in terms of ...
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