Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

Language
en
Document Type
Article
Issue Date
2014-02-11
Issue Year
2013
Authors
Fromm, Felix
Oliveira Jr., M. H.
Molina-Sánchez, A.
Hundhausen, Martin
Lopes, J. M. J.
Riechert, H.
Wirtz, L.
Seyller, T.
Editor
Abstract

We report a Raman study of the so-called buffer layer with (6\sqrt 3\times 6\sqrt 3)R30° periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a non-vanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer layer.

Journal Title
New Journal of Physics
Volume
15
Issue
4
Citation
New Journal of Physics 15.4 (2013): 06.02.2014 <http://iopscience.iop.org/1367-2630/15/4/043031>
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