- AutorIn
- Jan-Uwe Schmidt
- Titel
- Synthesis of silicon nanocrystal memories by sputter deposition
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:d120-qucosa-28765
- Schriftenreihe
- Wissenschaftlich-technische Berichte
- Bandnummer
- FZR-425
- Quellenangabe
- Wissenschaftlich-Technische Berichte / Forschungszentrum Rossendorf; FZR-425 2005
- Erstveröffentlichung
- 2005
- Abstract (EN)
- Aim of this work was, to investigate the preparation of Si NC memories by sputter deposition. The milestones are as follows: - Review of relevant literature. - Development of processes for an ultrathin tunnel-oxide and high quality sputtered SiO2 for use as control-oxide. - Evaluation of methods for the preparation of an oxygen-deficient silicon oxide inter-layer (the precursor of the Si NC layer). - Characterization of deposited films. - Establishment of techniques capable of probing the phase separation of SiOx and the formation of Si NC. - Establishment of annealing conditions compatible with the requirements of current CMOS technology based on experimental results and simulations of Si NC formation. - Preparation Si NC memory capacitors using the developed processes. - Characterization of these devices by suitable techniques. Demonstration of their memory functionality.
- Freie Schlagwörter (EN)
- Sputter deposition, Silicon nanocrystals, charge storage, Nanocrystal MOS devices
- Verlag
- Forschungszentrum Rossendorf, Dresden
- URN Qucosa
- urn:nbn:de:bsz:d120-qucosa-28765
- Veröffentlichungsdatum Qucosa
- 31.03.2010
- Dokumenttyp
- Bericht
- Sprache des Dokumentes
- Englisch