- AutorIn
- Thomas Waechtler
- Steffen Schulze
- Lutz Hofmann
- Sascha Hermann
- Nina Roth
- Stefan E. Schulz
- Thomas Gessner
- Heinrich Lang
- Michael Hietschold
- Titel
- Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:ch1-200901295
- Quellenangabe
- AVS 9th International Conference on Atomic Layer Deposition (ALD 2009), Monterey, CA (USA), July 19-22, 2009
- Abstract (EN)
- Copper films with a thickness in the nanometer range are required as seed layers for the electrochemical Cu deposition to form multilevel interconnects in ultralarge-scale integrated (ULSI) electronic devices. Continuously shrinking device dimensions and increasing aspect ratios of the dual-damascene structures in the copper-based metallization schemes put ever more stringent requirements on the films with respect to their conformality in nanostructures and thickness homogeneity across large wafers. Due to its intrinsic self-limiting film growth characteristic, atomic layer deposition (ALD) appears appropriate for homogeneously coating complex substrates and to replace conventional physical vapor deposition (PVD) methods beyond the 32 nm technology node. To overcome issues of direct Cu ALD, such as film agglomeration at higher temperatures or reduced step coverage in plasma-based processes, an ALD copper oxide film may be grown under mild processing conditions, while a subsequent reduction step converts it to metallic copper. In this poster, which was presented at the AVS 9th International Conference on Atomic Layer Deposition (ALD 2009), held in Monterey, California from 19 to 22 July 2009, we report detailed film growth studies of ALD copper oxide in the self-limiting regime on SiO2, TaN and Ru. Applications in subsequent electrochemical deposition processes are discussed, comparing Cu plating results on as-deposited PVD Ru as well as with PVD and reduced ALD Cu seed layer.
- Andere Ausgabe
- URL
Link: http://www.ald-avs.org/ - Freie Schlagwörter
- Atomic Layer Deposition (ALD)
- Copper
- Copper oxide
- Dielectric function
- Electroplating
- Ellipsometry
- Metallization
- Reduction
- Silicon oxide
- Tantalum nitride
- Thin film
- Klassifikation (DDC)
- 620
- 530
- 540
- Normschlagwörter (GND)
- Dielektrische Funktion
- Dünne Schicht
- Ellipsometrie
- Galvanische Abscheidung
- Kupfer
- Kupferoxide
- Metallisierungsschicht
- Reduktion <Chemie>
- Ruthenium
- Siliciumdioxid
- Tantalnitride
- ULSI
- Verkupferung
- Verlag
- Fraunhofer ENAS, Chemnitz
- American Vacuum Society (AVS), Chemnitz
- Publizierende Institution
- Technische Universität Chemnitz, Chemnitz
- URN Qucosa
- urn:nbn:de:bsz:ch1-200901295
- Veröffentlichungsdatum Qucosa
- 10.08.2009
- Dokumenttyp
- Vorlesung/Vortrag
- Sprache des Dokumentes
- Englisch