- AutorIn
- Làszlò Szilàgyi Technische Universität Dresden, Chair for Circuit Design and Network Theory, Germany
- Guido BelfioreTechnische Universität Dresden, Chair for Circuit Design and Network Theory, Germany
- Ronny HenkerTechnische Universität Dresden, Chair for Circuit Design and Network Theory, Germany
- Frank Ellinger
- Titel
- 20–25 Gbit/s low-power inductor-less single-chip optical receiver and transmitter frontend in 28 nm digital CMOS
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-706571
- Quellenangabe
- International journal of microwave and wireless technologies : publ. in association with the European Microwave Association (EuMA)
Erscheinungsjahr: 2017
Jahrgang: 9
Heft: 8
Seiten: 1667-1677
ISSN: 1759-0787
E-ISSN: 1759-0795 - Erstveröffentlichung
- 2017
- Abstract (EN)
- The design of an analog frontend including a receiver amplifier (RX) and laser diode driver (LDD) for optical communication system is described. The RX consists of a transimpedance amplifier, a limiting amplifier, and an output buffer (BUF). An offset compensation and common-mode control circuit is designed using switched-capacitor technique to save chip area, provides continuous reduction of the offset in the RX. Active-peaking methods are used to enhance the bandwidth and gain. The very low gate-oxide breakdown voltage of transistors in deep sub-micron technologies is overcome in the LDD by implementing a topology which has the amplifier placed in a floating well. It comprises a level shifter, a pre-amplifier, and the driver stage. The single-chip frontend, fabricated in a 28 nm bulk-digital complementary metal–oxide–semiconductor (CMOS) process has a total active area of 0.003 mm² , is among the smallest optical frontends. Without the BUF, which consumes 8 mW from a separate supply, the RX power consumption is 21 mW, while the LDD consumes 32 mW. Small-signal gain and bandwidth are measured. A photo diode and laser diode are bonded to the chip on a test-printed circuit board. Electro-optical measurements show an error-free detection with a bit error rate of 10⁻¹² at 20 Gbit/s of the RX at and a 25 Gbit/s transmission of the LDD.
- Andere Ausgabe
- Link zum Artikel der zuerst in der Zeitschrift 'International journal of microwave and wireless technologies' erschienen ist
DOI: 10.1017/S1759078717000472 - Freie Schlagwörter (DE)
- RF Front-Ends, Aktive Schaltungen, Breitbandverstärker
- Freie Schlagwörter (EN)
- RF front-ends, Active circuits, Broadband amplifiers
- Klassifikation (DDC)
- 620
- Verlag
- Cambridge University Press, Cambridge
- Förder- / Projektangaben
- Deutsche Forschungsgemeinschaft (DFG)
SFB 912 Highly Adaptive Energy-Efficient Computing
(HAEC)
ID: 164481002 - European Social Fund (ESF)
Young Investigators Group Atto3D - European Commission (EC)
FP7 | SP1 | ICT
Adaptive Data and Power Aware Transceivers for Optical Communications
(ADDAPT)
ID: 619197 - Version / Begutachtungsstatus
- publizierte Version / Verlagsversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-706571
- Veröffentlichungsdatum Qucosa
- 29.05.2020
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch
- Lizenz / Rechtehinweis