- AutorIn
- Marcel Junige Institute of Semiconductors and Microsystems (IHM), Technische Universität Dresden
- Tim OddoyInstitute of Semiconductors and Microsystems (IHM), Technische Universität Dresden
- Rositsa YakimovabLinköping University, Department of Physics, Chemistry and Biology (IFM), Semiconductor Materials
- Vanya Darakchievab
- Christian Wenger
- Grzegorz Lupinac
- Julia Kitzmann
- Matthias Albert
- Johann W. Bartha
- Titel
- Atomic layer deposition of Al²O³ on NF³-pre-treated graphene
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-351886
- Konferenz
- SPIE Microtechnologies. Barcelona, 4.-6. May 2015
- Quellenangabe
- Nanotechnology VII
Herausgeber: Ion M. Tiginyanu
Erscheinungsort: Bellingham, Wash.
Verlag: SPIE
Erscheinungsjahr: 2015
Titel Schriftenreihe: Proceedings of SPIE
Bandnummer Schriftenreihe: 9519 - Erstveröffentlichung
- 2015
- Abstract (EN)
- Graphene has been considered for a variety of applications including novel nanoelectronic device concepts. However, the deposition of ultra-thin high-k dielectrics on top of graphene has still been challenging due to graphene's lack of dangling bonds. The formation of large islands and leaky films has been observed resulting from a much delayed growth initiation. In order to address this issue, we tested a pre-treatment with NF³ instead of XeF² on CVD graphene as well as epitaxial graphene monolayers prior to the Atomic Layer Deposition (ALD) of Al²O³. All experiments were conducted in vacuo; i. e. the pristine graphene samples were exposed to NF³ in the same reactor immediately before applying 30 (TMA - H²O) ALD cycles and the samples were transferred between the ALD reactor and a surface analysis unit under high vacuum conditions. The ALD growth initiation was observed by in-situ real-time Spectroscopic Ellipsometry (irtSE) with a sampling rate above 1 Hz. The total amount of Al²O³ material deposited by the applied 30 ALD cycles was cross-checked by in-vacuo X-ray Photoelectron Spectroscopy (XPS). The Al²O³ morphology was determined by Atomic Force Microscopy (AFM). The presence of graphene and its defect status was examined by in-vacuo XPS and Raman Spectroscopy before and after the coating procedure, respectively.
- Andere Ausgabe
- Link zum Artikel, der zuerst in der Zeitschrift 'Proceedings of SPIE' erschienen ist.
DOI: 10.1117/12.2181242 - Freie Schlagwörter (DE)
- Atomschichtabscheidung (ALD), Aluminium(III)oxid (Al²O³), Graphen, In-Vakuo-Vorbehandlung, Stickstoff trifluorid (NF³), in-situ Echtzeit Spektroskopische Ellipsometrie (irtSE), in-vacuo Röntgen-Photoelektronen Spektroskopie (XPS), Rasterkraftmikroskopie (AFM)
- Freie Schlagwörter (EN)
- Atomic Layer Deposition (ALD), Aluminium(III) oxide (Al²O³), graphene, in-vacuo pre-treatment, Nitrogen trifluoride (NF³), in-situ real-time Spectroscopic Ellipsometry (irtSE), in-vacuo X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy (AFM)
- Klassifikation (DDC)
- 620
- Verlag
- SPIE, Bellingham, Wash.
- Förder- / Projektangaben
- German Research Foundation ID: BA 2009/3-1
- Version / Begutachtungsstatus
- publizierte Version / Verlagsversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-351886
- Veröffentlichungsdatum Qucosa
- 06.09.2019
- Dokumenttyp
- Konferenzbeitrag
- Sprache des Dokumentes
- Englisch
- Lizenz / Rechtehinweis