Publikationsserver der Universitätsbibliothek Marburg
Titel:Mikroskopische Analyse optoelektronischer Eigenschaften von Halbleiterverstärkungsmedien für Laseranwendungen
Autor:Bückers, Christina
Weitere Beteiligte: Koch, Stephan W. (Prof. Dr.)
Veröffentlicht:2011
URI:https://archiv.ub.uni-marburg.de/diss/z2011/0046
DOI: https://doi.org/10.17192/z2011.0046
URN: urn:nbn:de:hebis:04-z2011-00466
DDC: Physik
Titel (trans.):Microscopic analysis of the optoelectronic properties of semiconductor gain media for laser applications
Publikationsdatum:2011-01-20
Lizenz:https://rightsstatements.org/vocab/InC-NC/1.0/

Dokument

Schlagwörter:
GaAsBi, Modulation spectroscopy, Semiconductor laser modelling, Modellierung, Auger-recombination, Optischer Gewinn, Modulationsspektroskopie, Halbleiterlaser, AlGaInAsSb, GaNAsP, Lumineszenz, AlGaInAs, Auger-Rekombination, Optical gain, Luminescence

Zusammenfassung:
Eine mikroskopische Vielteilchentheorie wird auf verschiedenste Materialsysteme angewendet, die als Verstärkungselement den Grundbaustein von Halbleiterlasersystemen bilden. Das Verständnis der mikroskopischen Prozesse und ihre Modellierung ermöglichen die Analyse und quantitative Prognose optoelektronischer Eigenschaften, die das Laserverhalten maßgeblich bestimmen. Mit dem Modell lassen sich Materialeigenschaften treffend simulieren, wie umfassende Theorie-Experiment-Vergleiche zeigen. Die Untersuchung von Absorption, optischer Verstärkung, Lumineszenz und intrinsischen Ladungsträgerverlusten durch strahlende sowie Auger-Rekombination bildet den Leitfaden zur Charakterisierung verschiedenster Halbleiterverstärkungsmedien. Darauf aufbauend werden nicht nur Lasereigenschaften wie Emissionswellenlängen und Schwellenverhalten berechenbar, sondern es lassen sich auch unbekannte und experimentell schwer zugängliche Strukturparameter bestimmen. So können Konzepte erarbeitet werden, mit denen Laserdesigns mit Blick auf die Anforderungen spezifischer Anwendungen hin optimiert und weiterentwickelt werden können, und mit denen neuartige Lasersysteme auf ihr Anwendungspotential hin eingeschätzt und bewertet werden können.

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