Characterization of GaSb thin films from tailor-made single source precursors
We investigated the growth and the surface properties of GaSb on Si(001) substrate by using a tailor-made fully-alkyl-substituted heterocyclic single-source precursor. The
precursor properties during the evaporation process where monitored by RGA. The initial film growth was monitored by AES. Using a HV cold wall reactor, dense GaSb films could be produced and where characterized by AES, AFM and S-XPS. The results are discussed in terms of a correlation of the electronic and geometrical properties with the composition and structure of the films.
precursor properties during the evaporation process where monitored by RGA. The initial film growth was monitored by AES. Using a HV cold wall reactor, dense GaSb films could be produced and where characterized by AES, AFM and S-XPS. The results are discussed in terms of a correlation of the electronic and geometrical properties with the composition and structure of the films.
Vorschau
Zitieren
Zitierform:
Zitierform konnte nicht geladen werden.
Rechte
Nutzung und Vervielfältigung:
Dieses Werk kann unter einer
Creative Commons Namensnennung - Nicht kommerziell - Keine Bearbeitungen 4.0 Lizenz (CC BY-NC-ND 4.0)
genutzt werden.