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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-78623
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.7862
Zusammenfassung
By etching a periodic array of holes through a ;mobility two-dimensional electron gas we define high-a lateral, ``anti\'\'-dot-type superlattice with periods a=200 and a=300 nm, much smaller than the electron mean free path in the unpatterned material. The devices are fabricated using electron beam lithography and reactive ion etching techniques, and characterized by magnetotransport ...
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