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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-478002
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.47800
Zusammenfassung
By using 2D materials heterostructures it is possible to exploit the properties of both materials at the interface, for instance, spin-dependent transport for application in spintronic devices. Here, using a heterostructure of MoTe2/Graphene the authors demonstrate a proximity induced spin-galvanic effect which can be controlled by the gate voltage. The ability to engineer new states of matter ...
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