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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-383752
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.38375
Zusammenfassung
Capacitance-voltage (C-V) traces in n-type-(Bi1-xSbx)(2)Te-3/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage (V-tg) from positive to negative values, the system at the interface is tuned from accumulation, via depletion into inversion. The results show the typical low-frequency and high frequency C-V traces, depending on measuring ...
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