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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-373843
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.37384
Alternative Links zum Volltext:DOI
Zusammenfassung
Experiments on self-diffusion in amorphous silicon (Si) were performed at temperatures between 460 to 600 degrees C. The amorphous structure was prepared by Si ion implantation of single crystalline Si isotope multilayers epitaxially grown on a silicon-on-insulator wafer. The Si isotope profiles before and after annealing were determined by means of secondary ion mass spectrometry. Isothermal ...
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