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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-339672
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.33967
Zusammenfassung
The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to new conducting channels forming in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are ...
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