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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-277684
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.27768
Alternative Links zum Volltext:DOI
Zusammenfassung
We present a systematic experimental investigation of an unusual transport phenomenon observed in two-dimensional (2D) electron gases in Si/SiGe heterostructures under integer quantum Hall effect (IQHE) conditions. This phenomenon emerges under specific experimental conditions and in different material systems. It is commonly referred to as a Hall resistance overshoot but it lacks a consistent ...
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