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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-22324
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.2232
Zusammenfassung
Tunnel ionization of semiconductor deep impurity centres has been investigated in a field of far-infrared radiation where photon energies are several factors of ten smaller than the binding energy of the impurities. Depending on the radiation electric field strength, ionization is caused by phonon-assisted tunnel ionization or direct electron tunnelling. Applying high-power pulsed lasers, two ...
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