| PDF (365kB) |
- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-22066
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.2206
Zusammenfassung
Using the technique of photoluminescence imaging, self-organized patterns of high-electron density in homogeneous n-GaAs layers under homogeneous microwave irradiation are studied. The structures are shown to be analogous to current filaments in a static electric field. The symmetry of the microwave induced patterns is not constrained by the current feeding electrodes. It is, however, ...
Nur für Besitzer und Autoren: Kontrollseite des Eintrags
Downloadstatistik