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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-188020
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.18802
Zusammenfassung
We present magnetotransport measurements (up to 7 T) performed at very low temperatures (down to 20 mK) on a GaAs sample containing two parallel delta -doped layers whose carrier concentration can be varied by means of a gate electrode. With increasing negative gate voltage the resistance becomes more strongly temperature-dependent, indicating a more localized electron system. The ...
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