Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells measured by Spin Photocurrents

URN zum Zitieren dieses Dokuments:: urn:nbn:de:bvb:355-epub-18703
DOI zum Zitieren dieses Dokuments:: 10.5283/epub.1870

Giglberger, Stephan ; Golub, Leonid ; Belkov, Vassilij ; Danilov, Sergey ; Schuh, Dieter ; Gerl, Christian ; Rohlfing, Franziska ; Stahl, Joachim ; Wegscheider, Werner ; Weiss, Dieter ; Prettl, Wilhelm ; Ganichev, Sergey

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Veröffentlichungsdatum dieses Volltextes: 05 Aug 2009 13:33

Alternative Links zum Volltext:DOI Verlag

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The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are applied to determine the relative strengths of Rashba and Dresselhaus band spin-splitting in (001)- grown GaAs and InAs based two dimensional electron systems. We observed that shifting the $\\delta$-doping plane from one side of the quantum well to the other results in a change of sign of ...