| PDF (792kB) |
- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-174900
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.17490
Alternative Links zum Volltext:DOI
Zusammenfassung
A thresholdlike behavior of the far-infrared photoconductivity due to cyclotron resonance and a drastic deviation of the cyclotron-resonance line shape from a Lorentzian has been observed in n-GaAs at low temperatures by applying a high-power cw far-infrared laser. Both effects may consistently be explained in terms of generation-recombination-induced nonequilibrium phase transitions showing ...
Nur für Besitzer und Autoren: Kontrollseite des Eintrags
Downloadstatistik