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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-170497
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.17049
Alternative Links zum Volltext:DOI
Zusammenfassung
Self-sustained current oscillations due to impurity breakdown in n-type GaAs epitaxial layers are reported for various magnetic-field strengths and orientations of the field with respect to the direction of current. In all cases relaxation oscillations at the onset of breakdown and formation of a current filament in the postbreakdown regime are observed. A magnetic field normal to the epitaxial ...
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