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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-169382
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.16938
Alternative Links zum Volltext:DOI
Zusammenfassung
Self-sustained current oscillations in high-purity n-type GaAs epitaxial layers were investigated for intermittent behavior in the control parameter plane constituted by the constant bias voltage and an external magnetic field. Intermittent windows were observed in a sequence of Hopf bifurcations. Quasiperiodic and frequency-locked oscillations were found to follow an intermittency type-II or ...
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