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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-165201
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.16520
Zusammenfassung
The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at millikelvin temperatures. Fully developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for which the lowest energy excitation is not a spin flip. This can be accounted for by the relatively high intrinsic Zeeman energy in this single valley ...
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