Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

Please always quote using this URN: urn:nbn:de:bvb:20-opus-115448
  • In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence onIn this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches. (C) 2014 Author(s).show moreshow less

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Metadaten
Author: T. Braun, C. Schneider, S. Maier, R. Igusa, S. Iwamoto, A. Forchel, S. Höfling, Y. Arakawa, M. Kamp
URN:urn:nbn:de:bvb:20-opus-115448
Document Type:Journal article
Faculties:Fakultät für Physik und Astronomie / Physikalisches Institut
Language:English
Parent Title (English):AIP Advances
ISSN:2158-3226
Year of Completion:2014
Volume:4
Issue:9
Source:AIP Advances 4, 097128 (2014). DOI:10.1063/1.4896284
DOI:https://doi.org/10.1063/1.4896284
Sonstige beteiligte Institutionen:Wilhelm-Conrad-Röntgen-Forschungszentrum für komplexe Materialsysteme
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik
Tag:GAAS
Release Date:2015/07/14
Licence (German):License LogoCC BY: Creative-Commons-Lizenz: Namensnennung