- AutorIn
- Fabian Teichert Technische Universität Chemnitz
- Andreas ZienertTechnische Universität Chemnitz
- Jörg SchusterFraunhofer Institute for Electronic Nano Systems (ENAS), 09126 Chemnitz, Germany#Dresden Center for Computational Materials Science (DCMS), TU Dresden, 01062 Dresden, Germany
- Michael Schreiber
- Titel
- Electronic transport through defective semiconducting carbon nanotubes
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:ch1-qucosa2-324628
- Quellenangabe
- Journal of Physics Communications Verlag: IOP Publishing Ltd.
Jahrgang: 2
Heft: 10
E-ISSN: 2399-6528
DOI: 10.1088/2399-6528/aae4cb
Artikelnummer: 105012 - Erstveröffentlichung
- 2018
- Abstract (EN)
- We investigate the electronic transport properties of semiconducting (m, n) carbon nanotubes (CNTs) on the mesoscopic length scale with arbitrarily distributed realistic defects. The study is done by performing quantum transport calculations based on recursive Green's function techniques and an underlying density-functional-based tight-binding model for the description of the electronic structure. Zigzag CNTs as well as chiral CNTs of different diameter are considered. Different defects are exemplarily represented by monovacancies and divacancies. We show the energy-dependent transmission and the temperature-dependent conductance as a function of the number of defects. In the limit of many defetcs, the transport is described by strong localization. Corresponding localization lengths are calculated (energy dependent and temperature dependent) and systematically compared for a large number of CNTs. It is shown, that a distinction by (m − n)mod 3 has to be drawn in order to classify CNTs with different bandgaps. Besides this, the localization length for a given defect probability per unit cell depends linearly on the CNT diameter, but not on the CNT chirality. Finally, elastic mean free paths in the diffusive regime are computed for the limit of few defects, yielding qualitatively same statements.
- Andere Ausgabe
- DOI: 10.1088/2399-6528/aae4cb
- Freie Schlagwörter (DE)
- Kohlenstoff-Nanoröhre, Defekt, dichtefunktionaltheorie-basiertes Tight binding, Elektronentransport, rekursiver Greenfunktionsformalismus, starke Lokalisierung, elastische mittlere freie Weglänge, Technische Universität Chemnitz, Publikationsfonds
- Freie Schlagwörter (EN)
- Carbon nanotube (CNT), defect, density-functional-based tight binding (DFTB), electronic transport, recursive Greenʼs function formalism (RGF), strong localization, elastic mean free path, Chemnitz University of Technology, Publication funds
- Klassifikation (DDC)
- 530
- Normschlagwörter (GND)
- Kohlenstoff-Nanoröhre, Defekt, Elektronentransport
- Verlag
- IOP Publishing Ltd., Großbritannien
- Version / Begutachtungsstatus
- publizierte Version / Verlagsversion
- URN Qucosa
- urn:nbn:de:bsz:ch1-qucosa2-324628
- Veröffentlichungsdatum Qucosa
- 12.12.2018
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch