- AutorIn
- Thomas Waechtler
- Nina Roth
- Robert Mothes
- Steffen Schulze
- Stefan E. Schulz
- Thomas Gessner
- Heinrich Lang
- Michael Hietschold
- Titel
- Copper Oxide ALD from a Cu(I) <beta>-Diketonate: Detailed Growth Studies on SiO2 and TaN
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:ch1-200901741
- Quellenangabe
- ECS Transactions, Vol. 25, No. 4, pp. 277-287 (2009); Digital Object Identifier (DOI): 10.1149/1.3205062
- Abstract (EN)
- The atomic layer deposition (ALD) of copper oxide films from [(<sup>n</sup>Bu<sub>3</sub>P)<sub>2</sub>Cu(acac)] and wet oxygen on SiO<sub>2</sub> and TaN has been studied in detail by spectroscopic ellipsometry and atomic force microscopy. The results suggest island growth on SiO<sub>2</sub>, along with a strong variation of the optical properties of the films in the early stages of the growth and signs of quantum confinement, typical for nanocrystals. In addition, differences both in growth behavior and film properties appear on dry and wet thermal SiO<sub>2</sub>. Electron diffraction together with transmission electron microscopy shows that nanocrystalline Cu<sub>2</sub>O with crystallites < 5 nm is formed, while upon prolonged electron irradiation the films decompose and metallic copper crystallites of approximately 10 nm precipitate. On TaN, the films grow in a linear, layer-by-layer manner, reproducing the initial substrate roughness. Saturated growth obtained at 120°C on TaN as well as dry and wet SiO<sub>2</sub> indicates well-established ALD growth regimes. <br> © 2009 The Electrochemical Society. All rights reserved.
- Andere Ausgabe
- DOI: 10.1149/1.3205062
- URL
Link: http://dx.doi.org/10.1149/1.3205062 - Freie Schlagwörter
- Atomic Layer Deposition (ALD)
- Copper oxide
- Kupfer(I)
- Klassifikation (DDC)
- 620
- 660
- 530
- Normschlagwörter (GND)
- Atomschichtepitaxie
- Ausgangsmaterial
- Beschichten
- Diketonate <beta>
- Durchstrahlungselektronenmikroskopie
- Dünne Schicht
- Ellipsometrie
- Kraftmikroskopie
- Kupferkomplexe
- Kupferoxide
- Nanopartikel
- Nanotechnologie
- Schichtwachstum
- Siliciumdioxid
- Tantalnitride
- Verlag
- Fraunhofer ENAS, Chemnitz
- The Electrochemical Society, Inc., Chemnitz
- Publizierende Institution
- Technische Universität Chemnitz, Chemnitz
- URN Qucosa
- urn:nbn:de:bsz:ch1-200901741
- Veröffentlichungsdatum Qucosa
- 03.11.2009
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch