- AutorIn
- Marcus Jenderka
- Steffen Richter
- Michael Lorenz
- Marius Grundmann
- Titel
- Fundamental absorption edges in heteroepitaxial YBiO3 thin films
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:15-qucosa2-312303
- Quellenangabe
- Journal of Applied Physics
Erscheinungsjahr: 2016
Jahrgang: 120
Heft: 12
ISSN: 0021-8979
E-ISSN: 1089-7550
Artikelnummer: 125702 - Erstveröffentlichung
- 2016
- Abstract (EN)
- The dielectric function of heteroepitaxial YBiO3 grown on a-Al2O3 single crystals via pulsed laser deposition is determined in the spectral range from 0.03 eV to 4.5 eV by a simultaneous modeling of the spectroscopic ellipsometry and optical transmission data of YBiO3 films of different thicknesses. The (111)-oriented YBiO3 films are nominally unstrained and crystallize in a defective fluorite-type structure with a Fm3⎯⎯m space group. From the calculated absorption spectrum, a direct electronic bandgap energy of 3.6(1) eV and the signature of an indirect electronic transition around 0.5 eV are obtained. These values provide necessary experimental feedback to previous conflicting electronic band structure calculations predicting either a topologically trivial or a non-trivial insulating ground state in YBiO3.
- Andere Ausgabe
- Link zur Originalpublikation in Journal of Applied Physics
Link: http://dx.doi.org/10.1063/1.4962975 - Freie Schlagwörter (EN)
- Ellipsometry, Crystal structure, Pulsed laser deposition
- Klassifikation (DDC)
- 530
- Verlag
- American Institute of Physics, Melville
- Publizierende Institution
- Universität Leipzig, Leipzig
- Version / Begutachtungsstatus
- publizierte Version / Verlagsversion
- URN Qucosa
- urn:nbn:de:bsz:15-qucosa2-312303
- Veröffentlichungsdatum Qucosa
- 14.08.2018
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch
- Lizenz / Rechtehinweis