- AutorIn
- F. Zimmermann
- G. Gärtner
- H. Sträter
- C. Röder
- M. Barchuk
- D. Bastin
- P. Hofmann
- M. Krupinski
- T. Mikolajick
- J. Heitmann
- F. C. Beyer
- Titel
- Green coloring of GaN single crystals introduced by Cr impurity
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-812326
- Quellenangabe
- Journal of Luminescence
Erscheinungsjahr: 2019
Jahrgang: 207
Seiten: 507-511
E-ISSN: 0022-2313 - Erstveröffentlichung
- 2019
- Abstract (EN)
- In this study unintentionally doped GaN grown by hydride vapor phase epitaxy that exhibits a sharply delimited region of green color was investigated. Optical analysis was performed by absorption and photoluminescence spectroscopy. An absorption band between 1.5 and 2.0 eV was found to be responsible for the green color and was related to a sharp emission at 1.193 eV by luminescence and excitation spectroscopy. The appearance of both optical signatures in the region of green color was related to an increase of Cr contamination detected by secondary ion mass spectrometry. We propose that the origin of green color as well as the emission line at 1.193 eV is attributed to internal transitions of Cr⁴⁺.
- Andere Ausgabe
- Link zum Artikel, der zuerst in der Zeitschrift 'Journal of Luminescence' bei Elsevier erschienen ist
DOI: https://doi.org/10.1016/j.jlumin.2018.11.044 - Freie Schlagwörter (DE)
- Kristallverunreinigungen, Bulk-GaN, Hydrid-Gasphasenepitaxie, Absorptionsspektroskopie, Photolumineszenzspektroskopie
- Freie Schlagwörter (EN)
- Crystal impurities, Bulk GaN, Hydride vapor phase epitaxy, Absorption spectroscopy, Photoluminescence spectroscopy
- Klassifikation (DDC)
- 530
- Verlag
- Elsevier, Amsterdam
- Förder- / Projektangaben
- European Union (EU)
ID: 100231954 - Version / Begutachtungsstatus
- angenommene Version / Postprint / Autorenversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-812326
- Veröffentlichungsdatum Qucosa
- 10.10.2022
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch
- Lizenz / Rechtehinweis
- CC BY-NC-ND 4.0