- AutorIn
- M. Hoffmann Nanoelectronic Materials Laboratory GmbH, Dresden
- S. SlesazeckNanoelectronic Materials Laboratory GmbH, Dresden
- T. MikolajickTechnische Universität Dresden, Fakultät Elektrotechnik und Informationstechnik, Institut für Halbleiter- und Mikrosystemtechnik (IHM), Professur für Nanoelektronik#Nanoelectronic Materials Laboratory GmbH, Dresden
- Titel
- Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operation
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-775759
- Konferenz
- Device Research Conference (DRC). Ann Arbor, MI, 23.-26. June 2019
- Quellenangabe
- 2019 Device Research Conference (DRC)
Herausgeber: Institute of Electrical and Electronics Engineers (IEEE)
Erscheinungsort: New York, NY
Verlag: IEEE
Erscheinungsjahr: 2020
Seiten: 97-98 - Erstveröffentlichung
- 2020
- Abstract (EN)
- To overcome the fundamental limit of the transistor subthreshold swing of 60 mV/dec at room temperature, the use of negative capacitance (NC) in ferroelectric materials was proposed [1]. Due to the recent discovery of ferroelectricity in CMOS compatible HfO₂ and ZrO₂ based thin films [2], [3], the promise of ultra-low power steep-slope devices seems within reach. However, concerns have been raised about switching-speed limitations and unavoidable hysteresis in NC devices [4], [5]. Nevertheless, it was shown that NC effects without hysteresis can be observed in fast pulsed voltage measurements on ferroelectric/dielectric capacitors [6], which was recently confirmed using ferroelectric Hf₀.₅ Zr₀.₅ O₂[7], [8]. While in these works only the integrated charge after each pulse was studied, here we investigate for the first time if the transient voltage and charge characteristics are also hysteresis-free.
- Andere Ausgabe
- Link zum Artikel, der zuerst in der IEEE Xplore Digital Library erschienen ist
DOI: 10.1109/DRC46940.2019.9046415 - Freie Schlagwörter (DE)
- Kondensatoren, dielektrische Hysterese, ferroelektrische Werkstoffe, Ferroelektrizität, Halbleiter, Spannungsmessung, Zinkverbindungen
- Freie Schlagwörter (EN)
- capacitors, dielectric hysteresis, ferroelectric materials, ferroelectricity, semiconductor, voltage measurement, zinc compounds
- Klassifikation (DDC)
- 621.3
- Verlag
- IEEE, New York, NY
- Version / Begutachtungsstatus
- angenommene Version / Postprint / Autorenversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-775759
- Veröffentlichungsdatum Qucosa
- 26.01.2022
- Dokumenttyp
- Konferenzbeitrag
- Sprache des Dokumentes
- Englisch
- Deutsch
- Lizenz / Rechtehinweis