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Structural, optical and electrochemical properties of F-doped vanadium oxide transparent semiconducting thin films

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Abstract

In this study, F-doped vanadium oxide thin films with doping levels up to 60 at % were prepared by spray pyrolysis method on glass substrates. To measure the electrochemical properties, some films were deposited on fluorine-tin oxide coated glass substrates. The effect of F-doping on the structural, electrical, optical and electrochemical properties of vanadium oxide samples was investigated. The X-ray diffractographs analysis has shown that all the samples grow in tetragonal β-V2O5 phase structure with the preferred orientation of [200]. The intensity of (200) peak belonging to β-V2O5 phase was strongest in the undoped vanadium oxide film. The scanning electron microscopy images show that the samples have nanorod- and nanobelt-shaped structure. The size of the nanobelts in the F-doped vanadium oxide films is smaller than that in the pure sample and the width of the nanobelts increases from 30 to 70 nm with F concentration. With increasing F-doping level from 10 to 60 at %, the resistivity, the transparency and the optical band gap decrease from 111 to 20 Ω cm, 70 to 50% and 2.4 to 2.36 eV, respectively. The cyclic voltammogram (CV) results show that the undoped sample has the most extensive CV and by increasing F-doping level from 20 to 60 at %, the area of the CV is expanded. The anodic and cathodic peaks in F-doped samples are stronger.

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Authors and Affiliations

  1. Department of Physics, Faculty of basic science, University of Bojnord, Bojnord, Iran

    M. Mousavi & Gh. H. Khorrami

  2. Department of Physics, Ferdowsi University of Mashhad, Mashhad, Iran

    A. Kompany

  3. Department of Physics, Payame Noor University (PNU), Tehran, 19395-3697, Iran

    Sh. Tabatabai Yazdi

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  1. M. Mousavi
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  2. Gh. H. Khorrami
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  3. A. Kompany
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  4. Sh. Tabatabai Yazdi
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Correspondence to M. Mousavi.

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Mousavi, M., Khorrami, G.H., Kompany, A. et al. Structural, optical and electrochemical properties of F-doped vanadium oxide transparent semiconducting thin films. Appl. Phys. A 123, 755 (2017). https://doi.org/10.1007/s00339-017-1366-7

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