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Effect of Sn doping on the structure, magnetism and thermal expansion of Mn3Ga1−xSnxN (x = 0.1, 0.3, 0.5 and 0.7) compounds

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Abstract

The Sn-doped Mn3Ga1−xSnxN compounds were prepared by solid-state sintering methods. The negative thermal expansion (NTE) performance and correlated structure and magnetism were investigated. A near zero thermal expansion (ZTE) behavior for Mn3Ga0.3Sn0.7N, exhibiting a coefficient of thermal expansion (CTE) of − 0.45 × 10−6 K−1 in a temperature range from 480 to 513 K, was discovered. The ZTE mechanism is proposed based upon the temperature dependence of dM/dT with respect to various Sn contents. The present ZTE material is probably regarded as a promising candidate for fabricating precision devices used far from ambient temperature circumstance.

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Acknowledgements

This work was supported by National Natural Sciences Foundation of China (Grant nos. 51674096 and 51671076).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Hebei University of Science and Technology, Shijiazhuang, 050000, China

    Yongjuan Dai & Chongyang Li

  2. Research Institute for Energy Equipment Materials, Hebei University of Technology, Tianjin, 300401, China

    Xin Zhang

  3. School of Materials Science and Engineering, Hebei University of Technology, Tianjin, 300401, China

    Huifen Peng

  4. HBIS Group Technology Research Institute, HeSteel Group, Shijiazhuang, 052165, China

    Zhonghua Sun

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  1. Yongjuan Dai
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Correspondence to Zhonghua Sun.

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Dai, Y., Li, C., Zhang, X. et al. Effect of Sn doping on the structure, magnetism and thermal expansion of Mn3Ga1−xSnxN (x = 0.1, 0.3, 0.5 and 0.7) compounds. Appl. Phys. A 123, 743 (2017). https://doi.org/10.1007/s00339-017-1378-3

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