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Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types

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Abstract

A chemical-etching based method for separating GaN/AlN and AlN epitaxial heterostructures grown on silicon with a silicon-carbide buffer layer and transferring them to substrates of any type is developed. GaN/AlN/SiC and AlN/SiC heterostructures 2.5 μm and 18 μm thick, respectively, are separated and transferred to a glass substrate. It is shown that a silicon-carbide buffer layer on silicon, grown by the substitution method, has a developed subsurface structure which allows easy separation of the film from the substrate and promotes the relaxation of elastic energy caused by a difference in thermal-expansion coefficients of the film and substrate. It is shown that mechanical stresses in the film after its separation from the silicon substrate almost completely relaxed.

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Authors and Affiliations

  1. Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, Bolshoi pr. 61, St. Petersburg, 199178, Russia

    S. A. Kukushkin, A. V. Osipov & A. V. Red’kov

  2. National Research University of Information Technologies, Mechanics and Optics, pr. Kronverkskii 49, St. Petersburg, 197101, Russia

    S. A. Kukushkin & A. V. Osipov

  3. Peter the Great Saint-Petersburg Polytechnic University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russia

    S. A. Kukushkin & A. V. Red’kov

Authors
  1. S. A. Kukushkin
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  2. A. V. Osipov
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  3. A. V. Red’kov
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Correspondence to A. V. Red’kov.

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Original Russian Text © S.A. Kukushkin, A.V. Osipov, A.V. Red’kov, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 3, pp. 414–420.

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Kukushkin, S.A., Osipov, A.V. & Red’kov, A.V. Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types. Semiconductors 51, 396–401 (2017). https://doi.org/10.1134/S1063782617030149

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  • DOI: https://doi.org/10.1134/S1063782617030149

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