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Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

  • Spectroscopy, Interaction with Radiation
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Abstract

The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In0.53Ga0.47As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In0.53Ga0.47As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.

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Authors and Affiliations

  1. Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow, 117105, Russia

    G. B. Galiev, E. A. Klimov, A. N. Klochkov, P. P. Maltsev & S. S. Pushkarev

  2. Faculty of Physics, Moscow State University, Moscow, 119991, Russia

    G. Kh. Kitaeva, V. V. Kornienko & K. A. Kuznetsov

  3. National Research Nuclear University “MEPhI”, Moscow, 115409, Russia

    M. M. Grekhov & O. S. Kolentsova

Authors
  1. G. B. Galiev
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  2. M. M. Grekhov
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  3. G. Kh. Kitaeva
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  4. E. A. Klimov
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  5. A. N. Klochkov
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  6. O. S. Kolentsova
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Correspondence to G. B. Galiev.

Additional information

Original Russian Text © G.B. Galiev, M.M. Grekhov, G.Kh. Kitaeva, E.A. Klimov, A.N. Klochkov, O.S. Kolentsova, V.V. Kornienko, K.A. Kuznetsov, P.P. Maltsev, S.S. Pushkarev, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 3, pp. 322–330.

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Galiev, G.B., Grekhov, M.M., Kitaeva, G.K. et al. Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates. Semiconductors 51, 310–317 (2017). https://doi.org/10.1134/S1063782617030071

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  • DOI: https://doi.org/10.1134/S1063782617030071

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