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Deposition of Nanostructurated Zr x La 1 − x O y Thin Films on P-type Si(100) Substrate by the Sol-Gel Route

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Abstract

The paper focuses on the electrical and structural characterization of nanostructurated ZrxLa1−xOy (ZLx) thin films in Zr atomic fractions in the range of x = 5 to 50%. High-k ZLx thin films were prepared on a Si(100) substrate using the sol-gel method. The influence of the annealing temperature in the presence of uniform oxygen flow (8 cm3/sec) on the insulator thickness was examined. It is found that the oxide growth versus time has parabolic behavior. The structure and morphology of the ZLx thin films were evaluated by x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM) techniques. Furthermore, material properties are investigated by x-ray photoelectron spectroscopy (XPS) analysis. The current density-voltage (J-V) and capacitance-voltage (C-V) characteristics are determined for Al/ZLx/Si devices. It is found that dielectric properties are sensitive to annealing conditions.

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Authors and Affiliations

  1. Department of Physics, University of Mazandaran, Babolsar, 4741695447, Iran

    Reza Gholipur, Ali Bahari & Masoud Ebrahimzadeh

Authors
  1. Reza Gholipur
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  2. Ali Bahari
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  3. Masoud Ebrahimzadeh
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Correspondence to Reza Gholipur.

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Gholipur, R., Bahari, A. & Ebrahimzadeh, M. Deposition of Nanostructurated Zr x La 1 − x O y Thin Films on P-type Si(100) Substrate by the Sol-Gel Route. Silicon 9, 173–181 (2017). https://doi.org/10.1007/s12633-015-9365-9

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  • DOI: https://doi.org/10.1007/s12633-015-9365-9

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