Skip to main content
SpringerLink
Log in

Microstructure of multilayer heterosystems containing molecules of Ge quantum dots in Si on the stages of nucleation and growth as revealed by EXAFS spectroscopy

  • Applications of Synchrotron Radiation in Structural Chemistry
  • Published:
Journal of Structural Chemistry Aims and scope Submit manuscript

Abstract

GeK edge EXAFS (Extended X-Ray Absorption Fine Structure) spectra have been measured for multilayer semiconducting heterosystems containing interacted groups of quantum dots (“molecules from quantum dots”) ordered in rings on different stages of their growth depending on topologic parameters and growth conditions. In accordance with our results obtained previously for the quantum dots of SiGe, for the molecules of quantum dots it was found that deformation at the interface leads to decrease in the interatomic distance of Ge–Ge by ~0.03 Å. Effect of heterosystem topology and temperature at different stages of their growth on interlayer diffusion was investigated. It was found that at the first growth stage (growth of “seeded islands” serving as a basis for obtaining the molecules) at 700°C a concentration of Ge atoms in the system is ~38%. With further growth of the vertically-matched quantum dots groups the concentration of Ge increases up to ~43-47% depending on the growth conditions. Comparable analysis of different modes of EXAFS measurements was performed to determine precisely structural parameters of heterosystem SiGe with different thickness grown on Si(100) surface.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S. B. Erenburg, N. V. Bausk, A. V. Nenashev, et al., J. Struct. Chem., 41, No. 5, 802 (2000).

    Article  CAS  Google Scholar 

  2. S. B. Erenburg, N. V. Bausk, N. P. Stepina, et al., Nucl. Instrum. Methods Phys. Res. A, 470, Nos. 1/2, 283 (2001).

    Article  CAS  Google Scholar 

  3. S. B. Erenburg, N. V. Bausk, L. N. Mazalov, et al., J. Synchrotron Radiat., 10, No. 5, 380 (2003).

    Article  CAS  Google Scholar 

  4. S. Erenburg, N. Bausk, A. Nikiforov, et al., AIP Conf. Proc., 772, 585 (2005).

    Article  CAS  Google Scholar 

  5. S. B. Erenburg, N. V. Bausk, L. N. Mazalov, et al., Nucl. Instrum. Methods Phys. Res. A, 543, No. 1, 188 (2005).

    Article  CAS  Google Scholar 

  6. S. B. Erenburg, N. V. Bausk, V. E. Bausk, et al., J. Phys.: Conf. Ser., 41, 261 (2006).

    CAS  Google Scholar 

  7. S. B. Erenburg, N. V. Bausk, A. V. Dvurechenskij, et al., Poverkhnost, No. 1, 31 (2007).

    Google Scholar 

  8. S. B. Erenburg, S. V. Trubina, N. V. Bausk, et al., Poverkhnost, No. 9, 47 (2011).

    Google Scholar 

  9. N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, et al., Fiz. Tekh. Poluprovodn., 32, No. 4, 385 (1998).

    CAS  Google Scholar 

  10. A. I. Yakimov, A. V. Dvurechenskii, and A. I. Nikiforov, J. Nanoelectron. Optoelectron., 1, No. 2, 119 (2006).

    Article  Google Scholar 

  11. O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenskii, et al., Fiz. Tekh. Poluprovodn., 34, No. 11, 1281 (2000).

    Google Scholar 

  12. J. Stangl, V. Holy, and G. Bauer, Rev. Mod. Phys., 76, No. 3, 725 (2004).

    Article  CAS  Google Scholar 

  13. M. Bayer, P. Hawrylak, and K. Hinzer, et al., Science, 291, No. 5503, 451 (2001).

    Article  CAS  Google Scholar 

  14. S. Kiravittaya, A. Rastelli, and O. G. Schmidt, Rep. Prog. Phys., 72, No. 4, 046502 (2009).

    Article  Google Scholar 

  15. A. I. Yakimov, A. A. Bloshkin, and A. V. Dvurechenskii, Phys. Rev. B, 81, No. 11, 115434 (2010).

    Article  Google Scholar 

  16. J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Lett., 76, No. 10, 1675 (1996).

    Article  CAS  Google Scholar 

  17. A. Lorke, R. J. Luyken, A. O. Govorov, et al., Phys. Rev. Lett., 84, No. 10, 2223 (2000).

    Article  CAS  Google Scholar 

  18. N. A. J. M. Kleemans, I. M. A. Bominaar-Silkens, V. M. Fomin, et al., Phys. Rev. Lett., 99, No. 14, 146808 (2007).

    Article  Google Scholar 

  19. Y. Saiga, D. S. Hirashima, and J. Usukura, Phys. Rev. B, 75, No. 4, 045343 (2007).

    Article  Google Scholar 

  20. T. Kuroda, T. Mano, T. Ochiai, et al., Phys. Rev. B, 72, No. 20, 205301 (2005).

    Article  Google Scholar 

  21. G. Huang, W. Guo, P. Bhattacharya, et al., Appl. Phys. Lett., 94, No. 10, 101115 (2009).

    Article  Google Scholar 

  22. P. A. Kuchinskaya, V. A. Zinov’ev, A. V. Nenashev, et al., Mater. Elektron. Tekh., No. 4, 42 (2011).

    Google Scholar 

  23. V. A. Zinov’ev, A. V. Dvurechenskii, P. A. Kuchinskaya, et al., Fiz. Tekh. Poluprovodn., 49, No. 2, 155 (2015).

    Google Scholar 

  24. P. Pfalzer, J.-P. Urbach, M. Klemm, et al., Phys. Rev. B, 60, No. 13, 9335 (1999).

    Article  CAS  Google Scholar 

  25. K. V. Klementev, J. Phys. D: Appl. Phys., 34, No. 2, 209 (2001).

    Article  CAS  Google Scholar 

  26. N. Binsted, EXCURV 98: CCLRC Daresbury Laboratory Computer Program (1998).

    Google Scholar 

  27. D. N. Lobanov, A. V. Novikov, K. E. Kudryavtsev, et al., Fiz. Tekh. Poluprovodn., 43, No. 3, 332 (2009).

    Google Scholar 

  28. V. G. Talalaev, A. A. Tonkikh, N. D. Zakharov, et al., Fiz. Tekh. Poluprovodn., 46, No. 11, 1492 (2012).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

    S. B. Erenburg, S. V. Trubina & V. V. Zvereva

  2. Budker Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

    S. B. Erenburg

  3. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

    V. A. Zinov’ev, A. V. Dvurechenskiy & P. A. Kuchinskaya

  4. ESRF, Grenoble, France

    K. O. Kvashnina

  5. HZDR, Institute of Resource Ecology, Dresden, Germany

    K. O. Kvashnina

Authors
  1. S. B. Erenburg
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. V. Trubina
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. V. Zvereva
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. A. Zinov’ev
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. V. Dvurechenskiy
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. P. A. Kuchinskaya
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. K. O. Kvashnina
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to S. B. Erenburg.

Additional information

Translated from Zhurnal Strukturnoi Khimii, Vol. 57, No. 7, pp. 1485-1495, September-October, 2016.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Erenburg, S.B., Trubina, S.V., Zvereva, V.V. et al. Microstructure of multilayer heterosystems containing molecules of Ge quantum dots in Si on the stages of nucleation and growth as revealed by EXAFS spectroscopy. J Struct Chem 57, 1407–1416 (2016). https://doi.org/10.1134/S0022476616070155

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S0022476616070155

Keywords

Search

Navigation