Abstract
In this work we report the dark current, photocurrent and carrier transport properties of the x-ray detector based on lead iodide (PbI2) crystal. The detectors were built with two orthogonal directions configuration as the bias electric field parallel to the crystallographic c-axis E//c and perpendicular to the c-axis E⊥c. It presents the electrical anisotropy including resistivity, dark current, carrier transport and x-ray induced photoelectricity properties with considering the configuration of bias field and c-axis. A mechanism of carrier scattering effect from anisotropic lattice structure, dislocation and stacking fault could be mainly responsible for this anisotropy property in PbI2 crystal. All the results indicate that the crystal orientation will be taken into account when we design and fabricate the x-ray detectors based on PbI2 crystals or films.
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K.S. Shah, P. Bennett, M. Klugerman, L. Moy, L. Cirignano, Y. Dmitriyev, M.R. Squillante, F. Olschner, W.W. Moses, I.E.E.E. Trans, Nucl. Sci. 44, 448 (1997). doi:10.1109/23.603688
K. Yixiu, L.E. Antonuk, Y. El-Mohri, L. Hu, Y. Li, A. Sawant, S. Zhong, Y. Wang, J. Yamamoto, Q. Zhao, IEEE Trans. Nucl. Sci. 52, 38 (2005). doi:10.1109/TNS.2004.843135
X.H. Zhu, Z.R. Wei, Y.R. Jin, A.P. Xiang, Cryst. Res. Technol. 42, 456 (2007). doi:10.1002/crat.200610847
X. Zhu, H. Sun, D. Yang, J. Yang, X. Li, X. Gao, J. Mater. Sci.: Mater. Electron. 25, 3337 (2014). doi:10.1007/s10854-014-2023-y
S. Yakunin, M. Sytnyk, D. Kriegner, S. Shrestha, M. Richter, G.J. Matt, H. Azimi, C.J. Brabec, J. Stangl, M.V. Kovalenko, W. Heiss, Nat. Photon. 9, 444 (2015). doi:10.1038/nphoton.2015.82
D. Liu, T.L. Kelly, Nat. Photon. 8, 133 (2014). doi:10.1038/nphoton.2013.342
K.S. Shah, F. Olschner, L.P. Moy, P. Bennett, M. Misra, J. Zhang, M.R. Squillante, J.C. Lund, Nucl. Instrum. Methods Phys. Res. A 380, 266 (1996). doi:10.1016/S0168-9002(96)00346-4
P.A. Beckmann, Cryst. Res. Technol. 45, 455 (2010). doi:10.1002/crat.201000066
B. Palosz, J. Phys.: Condens. Matter 2, 5285 (1990). doi:10.1088/0953-8984/2/24/001
M. Schlüter, M.L. Cohen, Phys. Rev. B 14, 424 (1976). doi:10.1103/PhysRevB.14.424
C. Gähwiller, G. Harbeke, Phys. Rev. 185, 1141 (1969). doi:10.1103/PhysRev.185.1141
H. Sun, X. Zhu, D. Yang, Z. He, S. Zhu, B. Zhao, J. Semicond. 33, 053002 (2012)
J. Tonn, A.N. Danilewsky, A. Cröll, M. Matuchova, J. Maixner, J. Cryst. Growth 318, 558 (2011). doi:10.1016/j.jcrysgro.2010.10.059
M. Matuchova, K. Zdansky, J. Zavadil, A. Danilewsky, J. Maixner, D. Alexiev, J. Mater. Sci.: Mater. Electron. 20, 289 (2009). doi:10.1007/s10854-008-9831-x
T. Hayashi, M. Kinpara, J.F. Wang, K. Mimura, M. Isshiki, J. Cryst. Growth 310, 47 (2008). doi:10.1016/jcrysgro.2007.10.004
H. Sun, X. Zhu, D. Yang, J. Yang, X. Gao, X. Li, Phys. Status Solidi A 211, 823 (2014). doi:10.1002/pssa.201330319
G. Zentai, L.D. Partain, R. Pavlyuchkova, C.H. Proano, M.M. Schieber, J. Thomas, Proc. SPIE 5541, 171 (2004). doi:10.1117/12.581223
X. Zhu, H. Sun, D. Yang, X. Zheng, Nucl. Instrum. Methods Phys. Res. A 691, 10 (2012). doi:10.1016/j.nima.2012.07.003
R.A. Street, S.E. Ready, F. Lemmi, K.S. Shah, P. Bennett, Y. Dmitriyev, J. Appl. Phys. 86, 2660 (1999). doi:10.1063/1.371107
Y. Dmitriev, P.R. Bennett, L.J. Cirignano, M. Klugerman, K.S. Shah, Nucl. Instrum. Methods Phys. Res. A 592, 334 (2008). doi:10.1016/j.nima.2008.04.003
P.D. Bloch, J.W. Hodby, T.E. Jenkins, D.W. Stacey, G. Lang, F. Levy, C. Schwab, J. Phys. C: Solid State Phys. 11, 4997 (1978). doi:10.1088/0022-3719/11/24/028
L. Mark, Fundamentals of Carrier Transport, 2nd edn. (Cambridge University Press, Cambridge, 2000)
K. Seeger, Semiconductor Physics: An Introduction, 8th edn. (Springer, Berlin, 2002)
R. Minder, G. Ottaviani, C. Canali, J. Phys. Chem. Solids 37, 417 (1976). doi:10.1016/0022-3697(76)90023-8
W.T. Read. Jr., Lond, Edinb Dublin Philos Mag J Sci: Ser 7 46, 111 (1955). doi:10.1080/14786440208520556
J.P. Zielinger, B. Pohoryles, J.C. Balland, J.G. Gross, A. Coret, J. Appl. Phys. 57, 293 (1985). doi:10.1063/1.334803
C. De Blasi, S. Galassini, C. Manfredotti, G. Micocci, L. Ruggiero, A. Tepore, Solid State Commun. 25, 149 (1978). doi:10.1016/0038-1098(78)91467-9
P.A. Lee, Physics and Chemistry of Materials with Layered Structures. Optical and Electrical Properties, vol. 4 (D. Reidel Publishing Company, Dordrecht, 1976)
Y. Zhou, L. Wang, S. Chen, S. Qin, X. Liu, J. Chen, D.-J. Xue, M. Luo, Y. Cao, Y. Cheng, E.H. Sargent, J. Tang, Nat. Photon. 9, 409 (2015). doi:10.1038/nphoton.2015.78
S.M. Ryvkin, Photoelectric Effects in Semiconductors (Consultants Bureau, New York, 1964)
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This work was supported by the Scientific Research Fund of Sichuan Provincial Education Department No. 15ZB0173, Technology Support Program Fund of Science and Technology Department of Sichuan Province No. 2014GZ0020, 2015GZ0194 2014GZX0012 and 2016FZ0018.
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Zhu, X., Sun, H., Yang, D. et al. Comparison of electrical properties of x-ray detector based on PbI2 crystal with different bias electric field configuration. J Mater Sci: Mater Electron 27, 11798–11803 (2016). https://doi.org/10.1007/s10854-016-5320-9
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DOI: https://doi.org/10.1007/s10854-016-5320-9