Abstract
This study determines the effect of incorporating reduced graphene oxide (RGO) nanosheets into poly(methyl methacrylate) (PMMA) on the resistive switching (RS) mechanisms by measuring the current–voltage characteristics for Au/PMMA/heavily doped p-type Si (p+-Si) and Au/PMMA:RGO/p+-Si devices. The effect of RGO content on the RS properties is also determined. The Au/PMMA/p+-Si device exhibits set/reset–free current–voltage characteristics because of the insulating properties of PMMA. However, the Au/PMMA:RGO/p+-Si device exhibits RS behavior. Incorporating RGO into PMMA results in an increase in conductivity, the formation of PMMA–RGO interfaces and a significant increase in the trap density at the PMMA/RGO interfaces, so the RS performance is improved for Au/PMMA:RGO/p+-Si devices. It is shown that the current density for Au/PMMA:RGO/p+-Si devices is limited by the combined effect of ohmic conduction, space-charge-limited current conduction and trap-filled limited current conduction. An excess amount of RGO in PMMA does not result in any memory effect during the forward- and reverse-biased sweeps because there is a significant increase in the conductivity of PMMA:RGO film.
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The authors acknowledge the support of the Ministry of Science and Technology, Taiwan (Contract No. 106-2112-M-018-001-MY3) in the form of grants.
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Lin, YJ., Wu, CL., Ke, ZY. et al. Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices. Indian J Phys 94, 1209–1214 (2020). https://doi.org/10.1007/s12648-019-01568-7
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DOI: https://doi.org/10.1007/s12648-019-01568-7