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Subthreshold Performance Analysis of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel Field Effect Transistor for Ultra Low Power Applications

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Abstract

An improved subthreshold analytical model of Germanium source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET Ge(SRC)-DH-DD-TM-SG-TFET is proposed. The dielectric gate oxide structure is comprised of Silicon-dioxide and Hafnium oxide. The high-K dielectric materials overcomes the Short Channel Effects caused by ultrathin silicon devices. The subthreshold analysis is carried out by solving a 2-D Poisson’s equation using the parabolic approximation method. The electrical characteristics of Ge(SRC)-DH-DD-TM-SG-Tunnel FET are analyzed using a 3-D Sentaurus TCAD device simulator and compared with the silicon based single halo and triple material surrounding gate TFET structures. The proposed model shows a lower ambipolar current and a better ION/IOFF ratio of 106. Moreover, the influence of germanium/silicon in dual dielectric materials has reduced the tunneling barrier width and the ON current (10−4 A/μm) of the proposed device and improved at the level of CMOS transistors.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Thiagarajar College of Engineering, Madurai, TamilNadu, 625015, India

    M. Venkatesh & N. B. Balamurugan

  2. Department of Computer Science and Engineering, Thiagarajar College of Engineering, Madurai, TamilNadu, 625015, India

    M. Suguna

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  1. M. Venkatesh
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  2. M. Suguna
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  3. N. B. Balamurugan
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Correspondence to M. Venkatesh.

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Venkatesh, M., Suguna, M. & Balamurugan, N.B. Subthreshold Performance Analysis of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel Field Effect Transistor for Ultra Low Power Applications. J. Electron. Mater. 48, 6724–6734 (2019). https://doi.org/10.1007/s11664-019-07492-0

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