Abstract
The highest performance of interband cascade detectors optimized for the longwave range of infrared radiation is investigated in this work to include decisive electric gain contribution. Presently, AIIIBV-type-II superlattice systems exhibit short carrier lifetimes limited by Shockley–Read–Hall generation–recombination processes. The maximum reported carrier lifetimes at 77 K for the InAs/GaSb and InAs/InAsSb type-II superlattices in longwave range correspond to ∼ 200 ns and ∼ 400 ns, respectively. We estimated theoretical detectivity of interband cascade detectors versus high operating temperatures, number of stages, absorber thickness, absorption coefficient and carrier lifetime; carrier lifetime were varied up to the reported value of MCT ∼ 1 μs. It has been shown that for room temperature the utmost performance–detectivity ∼ 1010 cmHz1/2/W for the optimized detector operating in the longwave range ∼ 10 μm and assuming electric gain effect could be reached.
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This paper has been done under financial support of the National Centre for Research and Development—Project DOB-BIO8/01/01/2016.
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Martyniuk, P., Hackiewicz, K., Rutkowski, J. et al. Ultimate Performance of IB CID T2SLs InAs/GaSb and InAs/InAsSb Longwave Photodetectors for High Operating Temperature Condition. J. Electron. Mater. 48, 6093–6098 (2019). https://doi.org/10.1007/s11664-019-07398-x
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DOI: https://doi.org/10.1007/s11664-019-07398-x