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Solution processed CuI/n-Si junction device annealed with and without iodine steam for ultraviolet photodetector applications

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Abstract

We report the fabrication and characterization of a facile and low-cost solution processed CuI/Si junction device for ultraviolet photodetector applications. The properties of CuI films are analyzed by Hall-effect measurement, X-ray diffraction pattern, ultraviolet–visible absorption spectrum, and field emission scanning electron microscope. The amount of iodine vacancies of CuI could be adjusted through subsequence anneals with/without iodine steam. Moderate process would improve the CuI crystallization and reduce iodine vacancies, and so thus raise the photocurrent and photo responsivity of CuI/Si junction. The made junction device performs a maximum Iphoto/Idark ratio of 3 × 104 to an ultraviolet light of 365 nm wavelength.

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Acknowledgements

This work was supported by the Ministry of Science and Technology, Taiwan, through Grant No. 104-2221-E-018-020. The authors thank the Department of Physics, National Changhua University of Education for providing the equipment.

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Authors and Affiliations

  1. Graduate Institute of Photonics, National Changhua University of Education, Changhua, 500, Taiwan

    Yu Wu Wang & Cheng Yu Chuang

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  1. Yu Wu Wang
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  2. Cheng Yu Chuang
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Correspondence to Yu Wu Wang.

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Wang, Y.W., Chuang, C.Y. Solution processed CuI/n-Si junction device annealed with and without iodine steam for ultraviolet photodetector applications. J Mater Sci: Mater Electron 29, 18622–18627 (2018). https://doi.org/10.1007/s10854-018-9980-5

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  • DOI: https://doi.org/10.1007/s10854-018-9980-5

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