Abstract
The remaining challenge for silicon photonics is creating a light-emitter on chip. Recently, a special group of two-dimensional materials, semiconducting transition-metal dichalcogenides, have been developed. These materials demonstrate unique electronic properties and excellent optoelectronic performance, opening up new possibilities to finally overcome this challenge. In this letter, we report a novel nano-scale silicon laser source, which was achieved by combining a far-field optimized silicon photonic crystal cavity and a two-dimensional gain material, tri-layer molybdenum ditelluride. When an optical continuous-wave pump was employed, the maximum lasing output power obtained was at a wavelength of 1080 nm. Such output power shows that this novel source has great potential for use in on-chip optical communication.
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Li, H., Fang, H., Xiao, J. et al. Infrared Semiconducting Transition-Metal Dichalcogenide Lasing with a Silicon Nanocavity. J. Korean Phys. Soc. 73, 278–282 (2018). https://doi.org/10.3938/jkps.73.278
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DOI: https://doi.org/10.3938/jkps.73.278