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Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures

  • SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
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Abstract

The electric-field behavior of resonance features of the photoelectric characteristics of InAs/GaAs heterostructures is investigated. The emission of carriers excited by light from InAs quantum dots into the GaAs matrix is ​​discussed. It is shown that at the temperature of liquid nitrogen the photocurrent in a strong transverse electric field is only determined by the effect of electron tunneling through a barrier formed at the quantum-dot interfaces. Comparison of the experimental curves with the results obtained using a quasiclassical expression for the tunneling-current component and subsequent analysis of the potential structure made it possible to refine the parameters of the heterostructure under study. The contribution of the resonance component caused by possible electron tunneling through the barrier with the participation of the local defect states to the total tunneling current is analyzed. The influence of the level of excitation of the system on the photocurrent flowing through the InAs/GaAs heterojunction is theoretically studied.

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ACKNOWLEDGMENTS

We are grateful to A.P. Gorshkov and T.O. Mishenko for help in the measurements and calculations. The measurements were performed on the structures synthesized by B.N. Zvonkov at the Physical-Technical Research Institute of the Nizhny Novgorod State University.

This study was carried out in the framework of the Federal Target Program “Scientific and Scientific-Pedagogical Personnel for Innovative Russia” in 2009–2013, applications 2011-1.2.1-12-000-2013-095 and 2012-1.3.1-12-000-2003- 031 (no. 8543). Authors thank also RFBR (grant 18-42-520062) for the support.

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Authors and Affiliations

  1. Nizhny Novgorod Institute of Management, Russian Presidential Academy of National Economy and Public Administration, 603950, Nizhny Novgorod, Russia

    M. L. Orlov & N. L. Ivina

  2. Nizhny Novgorod State Lobachevsky University, 603950, Nizhny Novgorod, Russia

    N. S. Volkova

  3. Institute for Physics of Microstructures, Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia

    M. L. Orlov & L. K. Orlov

  4. Nizhny Novgorod State Alekseev Technical University, 603950, Nizhny Novgorod, Russia

    L. K. Orlov

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  1. M. L. Orlov
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  2. N. S. Volkova
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  3. N. L. Ivina
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  4. L. K. Orlov
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Correspondence to M. L. Orlov.

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Translated by E. Bondareva

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Orlov, M.L., Volkova, N.S., Ivina, N.L. et al. Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures. Semiconductors 52, 1129–1136 (2018). https://doi.org/10.1134/S1063782618090129

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  • DOI: https://doi.org/10.1134/S1063782618090129

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