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Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide

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Abstract

It is proposed that the Poole–Frenkel effect be applied to predict radiation-induced charge accumulation in thermal silicon dioxide. Various conduction mechanisms of thermal silicon dioxide are considered, the conditions of the appearance of the Poole–Frenkel effect in it are determined, and the characteristics of donor centers participating in Poole–Frenkel electrical conductivity are calculated. A donor center level at an energy of 2.34 eV below the conduction-band bottom is determined and the concentration of ionized donor centers of 1.0 × 109 cm–3 at 400 K and a field strength of 10 MV/cm is found. It is concluded that the Poole–Frenkel effect can be applied not for prediction of the absolute value of the radiation-induced charge but for comparison of the samples in terms of the ability to accumulate it.

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Authors and Affiliations

  1. Research and Development Center, Sedakov Measuring Systems Research Institute, 603137, Nizhny Novgorod, Russia

    A. A. Shiryaev & E. L. Shobolov

  2. Alekseev Nizhny Novgorod State Technical University, 603950, Nizhny Novgorod, Russia

    V. M. Vorotyntsev

Authors
  1. A. A. Shiryaev
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  2. V. M. Vorotyntsev
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  3. E. L. Shobolov
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Correspondence to A. A. Shiryaev.

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Translated by N. Korovin

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Shiryaev, A.A., Vorotyntsev, V.M. & Shobolov, E.L. Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide. Semiconductors 52, 1114–1117 (2018). https://doi.org/10.1134/S1063782618090166

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