Composition and growth mode of MoSx sputtered films

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Ressource 1Download: Moser-JVacSciTech-1994-PV.pdf (1846.59 [Ko])
State: Public
Version: Final published version
Serval ID
serval:BIB_9E81E5239E8E
Type
Article: article from journal or magazin.
Collection
Publications
Institution
Title
Composition and growth mode of MoSx sputtered films
Journal
Journal of Vacuum Science and Technology A - Vacuum, Surfaces, and Films
Author(s)
Moser J., Lévy F., Bussy F.
ISSN
0734-2101
Publication state
Published
Issued date
1994
Peer-reviewed
Oui
Volume
12
Pages
494-500
Language
english
Abstract
MoS(x) lubricating thin films were deposited by nonreactive, reactive,
and low energy ion-assisted radio-frequency (rf) magnetron sputtering
from a MoS2 target. Depending on the total and reactive gas pressures,
the film composition ranges between MoS0.7 and MoS2.8. A low working
pressure was found to have effects similar to those of low-energy ion
irradiation. Films deposited at high pressure have (002) planes
preferentially perpendicular to the substrate, whereas films deposited
at low pressure or under low-energy ion irradiation have (002) mainly
parallel to it. Parallel films are sulfur deficient (MoS1.2-1.4). Their
growth is explained in terms of an increased reactivity of the basal
surfaces, itself a consequence of the creation of surface defects due to
ion irradiation. The films exhibit a lubricating character for all
compositions above MoS1.2. The longest lifetime in ball-on-disk wear
test was found for MoS1.5.
Open Access
Yes
Create date
01/10/2012 20:07
Last modification date
20/08/2019 16:04
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