Home > Publications database > Laser Treatment of Silicon Thin-Films for Photovoltaic Applications |
Book/Dissertation / PhD Thesis | FZJ-2018-05277 |
2018
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
Jülich
ISBN: 978-3-95806-347-1
Please use a persistent id in citations: http://hdl.handle.net/2128/19676 urn:nbn:de:0001-2018091928
Abstract: Thin-film silicon is an important material in the fields of photovoltaics. As well as microcrystalline (μc-Si:H), amorphous (a-Si:H) silicon has been used for a long as an absorber in thin-film solar cells. Moreover, the surface passivation of c-Si wafers for heterojunction solar cells is achieved with a-Si:H. In addition, a-Si:H is used as precursor for tunnel oxide passivated contacts. Here, a post-deposition thermal treatment of the a-Si:Hlayer is mandatory. In doing so, the amorphoussilicon develops crystalline phases. This annealing step is conducted at high temperatures, risking damage to the tunnel oxide. As a consequence, there is the idea of replacing amorphous silicon with microcrystalline silicon. In this work, the influence of a laser treatment on the structural, electrical and optical properties of a-Si:H and μc-Si:H was investigated. The diffusion of hydrogen for a-Si:H on glass substrates is thus of special interest. Firstly, the eligibility of Raman spectroscopy to evaluate the influence of a laser treatmenton the hydrogen concentration and the microstructure was studied. Therefore,a-Si:H was deposited on infrared transparent substrates. After deposition, the samples were annealed at different temperatures in a furnace. These samples were also analyzed with Fourier Transform Infrared Spectroscopy, a well-established method, in addition to Raman spectroscopy. The comparison of both analysis methods proved that Raman spectroscopy can be used to determine the relative change of the hydrogen concentration of amorphous silicon. In addition, the qualitative evolution of the microstructure parameter is competitive. As a result, Raman spectroscopy can be used to evaluate the influence of a Laser treatmenton the hydrogen concentration and the microstructure parameter of amorphous silicon. [...]
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